0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 1. gate 2. source 3. drain features v ds (v) = 30v i d =5.8 a (v gs =10v) r ds(on) 28 m (v gs =10v) r ds(on) 43 m (v gs =4.5v) absolute maximum ratings ta = 25 parameter symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain ta=25 5.8 current *1 ta=70 4.9 pulsed drain current *2 i dm 20 power dissipation *1 ta=25 1.4 ta=70 1 junction and storage temperature range t j ,t stg -55to150 *1the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 *2 repetitive rating, pulse width limited by junction temperature. i d p d a w thermal characteristics symbol typ max unit maximum junction-to-ambient*1 t 10s 65 90 /w maximum junction-to-ambient *1 steady-state 85 125 /w maximum junction-to-lead *2 steady-state r jl 43 60 /w *1the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25 *2 . the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. parameter r ja 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com smd type ic smd type transistors KO3404 product specification
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain-source breakdown voltage b vdss i d =250 a, v gs =0v 30 v v ds =24v, v gs =0v 1 v ds =24v, v gs =0v ,tj=55 5 gate-body leakage current i gss v ds =0v, v gs = 20v 100 na gate threshold voltage v gs(th) v ds =v gs i d =250 a 11.93 v on state drain current i d(on) v gs =4.5v, v ds =5v 20 a v gs =10v, i d =5.8a 22.5 28 v gs =10v, i d =5.8a t j =125 31.3 38 v gs =4.5v, i d =5.0a 34.5 43 m forward transconductance g fs v ds =5v, i d =5.8a 10 14.5 s diode forward voltage v sd i s =1a 0.76 1 v maximum body-diode continuous current i s 2.5 a reverse transfer capacitance c iss 680 820 pf gate resistance c oss 102 pf input capacitance c rss 77 pf output capacitance r g v gs =0v, v ds =0v, f=1mhz 3 3.6 total gate charge (10v) q g 13.88 17 nc total gate charge (4.5v) q g 6.78 8.1 nc gate source charge q gs 1.8 nc gate drain charge q gd 3.12 nc turn-on rise time t d(on) 4.6 6.5 ns turn-off delaytime t r 3.8 5.7 ns turn-off fall time t d(off) 20.9 30 ns turn-on delaytime t f 57.5ns body diode reverse recovery time t rr i f =5.8a, d i /d t =100a/ s 16.1 21 ns body diode reverse recovery charge q rr i f =5.8a, d i /d t =100a/ s 7.4 10 nc a m v gs =0v, v ds =15v, f=1mhz v gs =10v, v ds =15v, i d =5.8a v gs =10v, v ds =15v, r l =2.7 ,r gen =3 r ds(on) static drain-source on-resistance i dss zero gate voltage drain current KO3404 marking marking a4 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification
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